TAB 3 1 D²PAK Figure 1. Internal schematic diagram 'RU7$% * 6 Order code STB18NF30 VDSS 330 V RDS(on) max. 180 mΩ ID 18 A
* Designed for automotive a.

and AEC-Q101 qualified
* 100% avalanche tested
* 175 °C junction temperature Applications
* Switching appli.

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficien.

18NF03L

18NF25

18N10

18N120BN

18N20

18N20GH

18N20GS

18N25

18N25-HC

18N40

18N50

18N50-C

18N50-MH