Click to expand full text
STB18NF30
Automotive-grade N-channel 330 V, 160 mΩ typ., 18 A STripFET™ II Power MOSFET in a D²PAK package
Datasheet - production data
Features
TAB
3 1 D²PAK
Figure 1. Internal schematic diagram
'RU7$%
* 6
Order code STB18NF30
VDSS 330 V
RDS(on) max. 180 mΩ
ID 18 A
• Designed for automotive applications and AEC-Q101 qualified
• 100% avalanche tested • 175 °C junction temperature
Applications
• Switching applications
Description
This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge.