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18NM60N Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

General Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

It is therefore suitable for the most demanding high efficiency converters.

Overview

STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N N-channel 600 V, 0.26 Ω typ.

Key Features

  • Order codes VDSS (@Tjmax) RDS(on) max. ID PTOT STB18NM60N STF18NM60N STP18NM60N STW18NM60N 650 V 110 W 30 W < 0.285 Ω 13 A 110.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance TAB 3 1 D²PAK TAB 3 2 1 TO-220 3 2 1 TO-220FP 3 2 1 TO-247.