1N5822U Description
The 1N5822U Schottky diode is ESCC qualified. It is housed in a surface mount hermetically sealed ceramic LCC-2B package whose footprint is fully patible with industry standard as D5B. Its full planar technology allows superior performances and high reliability up to 150 °C junction temperature.
1N5822U Key Features
- Low forward voltage drop
- Very small conduction losses
- Ultrafast switchings with negligible losses
- High thermal conductivity materials
- Surface mount hermetic package
- Radiation performance
- 150 krad (Si) low dose rate
- 3 Mrad (Si) high dose rate
- ESCC qualified: detail specification 5106/020