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2001HI Datasheet ST2001HI

Manufacturer: STMicroelectronics

General Description

The ST2001HI is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation.

ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P t ot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Total Dissipation at Tc = 25 o C St orage Temperature Max.

Operating Junction Temperature Value 1500 600 7 10 20 7 55 -65 to 150 150 Uni t V V V A A A W o o C C November 1999 1/6 www.DataSheet4U.com ST2001HI THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 2.3 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 7 V I C = 100 mA L = 25 mH 600 T j = 125 C o Min.

Overview

www.DataSheet4U.com ® ST2001HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s NEW SERIES, ENHANCHED PERFORMANCE FULLY INSULATED PACKAGE FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED.