Key Features
- 4 mΩ ID 120 A PTOT 176.5 W
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Datasheets by Manufacturer
| Part Number |
Manufacturer |
Description |
|
BTW69-200N
|
STMicroelectronics |
Thyristors |
|
200NSR
|
Naina Semiconductor |
Standard Recovery Diodes |
|
200NS100
|
Naina Semiconductor |
Standard Recovery Diodes |
|
200NSR120
|
Naina Semiconductor |
Standard Recovery Diodes |
|
200NS10
|
Naina Semiconductor |
Standard Recovery Diodes |
|
200NS40
|
Naina Semiconductor |
Standard Recovery Diodes |
|
200NS120
|
Naina Semiconductor |
Standard Recovery Diodes |
|
200NS160
|
Naina Semiconductor |
Standard Recovery Diodes |
|
200NSR10
|
Naina Semiconductor |
Standard Recovery Diodes |
|
200NSR100
|
Naina Semiconductor |
Standard Recovery Diodes |