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24NM65N Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

General Description

This series of devices is designed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

It is therefore suitable for the most demanding high efficiency converters.

Overview

STW24NM65N-STI24NM65N-STF24NM65N STB24NM65N - STP24NM65N N-channel 650 V - 0.

Key Features

  • Type STB24NM65N STI24NM65N STF24NM65N STP24NM65N STW24NM65N VDSS (@TJmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω ID 19 A 19 A 19 A(1) 19 A 19 A 1. Limited only by maximum temperature allowed.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.