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2N2218 Datasheet

Silicon Planar Epitaxial NPN transistor

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DESCRIPTION
The 2N2218, 2N2219, 2N2221 and 2N2222 are sili-
con planar epitaxial NPN transistors in Jedec
TO-39 (for 2N2218 and 2N2219) and in Jedec
TO-18 (for 2N2221 and 2N2222) metal cases. They
are designed for high-speed switching applications
at collector currents up to 500 mA, and feature use-
ful current gain over a wide range of collector cur-
rent, low leakage currents and low saturation volt-
ages.
2N2218/2N2219 approved to CECC 50002-
100, 2N2221/2N2222 approved to CECC
50002-101 available on request.
2N2218-2N2219
2N2221-2N2222
HIGH-SPEED SWITCHES
TO-39
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
Pto t
T stg
Tj
Parameter
Collector-base Voltage (IE = 0)
Collector-emitter Voltage (IB = 0)
Emitter-base Voltage (IC = 0)
Collector Current
Total Power Dissipation at T amb 25 °C
for 2N2 21 8 and 2 N22 19
for 2N2 22 1 and 2 N22 22
at T c as e 25 °C
for 2N2 21 8 and 2 N22 19
for 2N2 22 1 and 2 N22 22
Storage Temperature
Junction Temperature
January 1989
V al ue
60
30
5
0.8
0.8
0.5
3
1.8
– 65 to 200
175
Unit
V
V
V
A
W
W
W
W
°C
°C
1/5


STMicroelectronics Electronic Components Datasheet

2N2218 Datasheet

Silicon Planar Epitaxial NPN transistor

No Preview Available !

2N2218-2N2219-2N2221-2N2222
THERMAL DATA
Rth j-cas e Thermal Resistance Junction-case
R th j-amb Thermal Resistance Junction-ambient
Max
Max
2N2218
2N2219
50 °C/W
187.5 °C/W
2N2221
2N2222
83.3 °C/W
300 °C/W
ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified)
Symbol
ICBO
IEBO
V(BR) CBO
V(BR)CE O *
V(BR) EBO
V CE (s at )*
V B E (s at )*
hFE*
Parameter
Collector Cutoff Current
(IE = 0)
Emitter Cutoff Current
(IC = 0)
Colllector-base Breakdown
Voltage (IE = 0)
Collector-emitter Breakdown
Voltage (IB = 0)
Emittter-base Breakdown
Voltage (IC = 0)
Collector-emitter Saturation
Voltage
Base-emitter Saturation
Voltage
DC Current Gain
fT
C CBO
Transition Frequency
Collector-base Capacitance
Test Conditions
VCB = 50 V
VCB = 50 V
T amb = 150 °C
VEB = 3 V
IC = 10 µA
IC = 10 mA
IE = 10 µA
IC = 150 mA
IC = 500 mA
IB = 15 mA
IB = 50 mA
IC = 150 mA
IC = 500 mA
IB = 15 mA
IB = 50 mA
for 2N 221 8 and 2N 22 21
IC = 0.1 mA
IC = 1 mA
VCE = 10 V
VCE = 10 V
IC = 10 mA
IC = 150 mA
IC = 500 mA
IC = 150 mA
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 1 V
for 2N 221 9 and 2N 22 22
IC = 0.1 mA
IC = 1 mA
VCE = 10 V
VCE = 10 V
IC = 10 mA
VCE = 10 V
IC = 150 mA
IC = 500 mA
IC = 150 mA
VCE = 10 V
VCE = 10 V
VCE = 1 V
I C = 20 mA
f = 100 MHz
VCE = 20 V
IE = 0
f = 100 kHz
VCB = 10 V
Min.
60
30
5
20
25
35
40
20
20
35
50
75
100
30
50
250
Typ.
Re (h ie )
Real Part of Input
Impedance
IC = 20 mA
f = 300 MHz
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
VCE = 20 V
Max.
10
10
10
0.4
1.6
1.3
2.6
120
300
8
60
Unit
nA
µA
nA
V
V
V
V
V
V
V
MHz
pF
2/5


Part Number 2N2218
Description Silicon Planar Epitaxial NPN transistor
Maker STMicroelectronics
PDF Download

2N2218 Datasheet PDF






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