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2N3810HR Datasheet, STMicroelectronics

2N3810HR Datasheet, STMicroelectronics

2N3810HR

datasheet Download (Size : 786.63KB)

2N3810HR Datasheet

2N3810HR transistors equivalent, hi-rel pnp dual matched bipolar transistors.

2N3810HR

datasheet Download (Size : 786.63KB)

2N3810HR Datasheet

Features and benefits

Vceo 60 V IC(max.) 0.05 A HFE at 10 V, 150 mA > 125 Tj(max.) 200 °C
* Hermetic packages
* ESCC qualified
* 100 krad Description The 2N3810K and SOC3810.

Application

and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration. .

Description

The 2N3810K and SOC3810HR are bipolar transistors able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5207/005 specification and available in Flat-8 a.

Image gallery

2N3810HR Page 1 2N3810HR Page 2 2N3810HR Page 3

TAGS

2N3810HR
Hi-Rel
PNP
dual
matched
bipolar
transistors
STMicroelectronics

Manufacturer


STMicroelectronics (https://www.st.com/)

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