2N6036 transistors equivalent, complementary power darlington transistors.
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* Good hFE linearity
* High fT frequency
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* Monolithic Darlington configuration with t(sintegrated antiparallel collector-emitter diode ducApplications r.
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* Linear and switching industrial equipment te PDescription oleThe devices are manufactured in planar stechnology .
oleThe devices are manufactured in planar stechnology with “base island” layout and bmonolithic Darlington configuration.
1 2 3
SOT-32
Figure 1. Internal schematic diagram
Obsolete Product(s) - O R1 typ. = 15 kΩ
R2 typ. = 100 Ω
Table 1. Device su.
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