STMicroelectronics 2N7000G
This Power MOSFET is the second generation of O STMicroelectronics unique “single feature size” - strip-based process. The resulting transistor ) shows extremely high packing density for low ont(s resistance, rugged avalanche characteristics and c less critical alignment steps therefore a u remarkable manufacturing reproducibility.2N7000G Specifications
- Package : TO-92
- Current Rating : 200mA
- Breakdown Voltage : 60V
- Threshold Voltage : 3V
- RDS(on) Max : 5Ω
- Input Capacitance : 60pF
- Terminals : 3
- Max Power Dissipation : 350mW
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | 2N7000G |
|---|---|
| Datasheet | 2N7000G Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Type VDSS RDS(on) max ID 2N7000 ) 2N7002 60 V 60 V < 5 Ω(@10V) 0.35 A < 5 Ω(@10V) 0.20 A t(s● Low Qg uc
● Low threshold drive rod Application te P
● Switching applications ole
DESCRIPTION
bs 3 2 1 SOT23-3L TO-92 Figure 1. Internal schematic diagram Obsolete Prod SOT23-3L TO-92 Table 1. Device summary Order codes 2N7000 2N7002 Marking 2N7000G ST2N Package TO-92 SOT23-3L Packaging Bulk Tape and reel November 2008 Rev 9 1/14 14 Contents Contents 2N7000, 2N7002 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 ) 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Obsolete Product(s) - Obsolete Product(s 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
