2NK100Z Datasheet | STMicroelectronics

Features Order code STD2NK100Z 1000 V - 100% avalanche tested - Gate charge minimized - Very low intrinsic capacitance - Zener-protected RDS(on) max. 8.5 Ω ID 1.85 A Applications - Switching applications Description AM01476v1_tab This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the Super MESH technology by STMicroelectronics, an optimization of the wellestablished Power MESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STD2NK100Z Product summary Order code STD2NK100Z Marking Package DPAK Packing Tape and reel DS14345 - Rev 1 - June 2023 For further information contact your local STMicroelectronics sales office. .st. STD2NK100Z Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Drain-source voltage Gate-source...