Datasheet Details
| Part number | 2NS04Z |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 103.54 KB |
| Description | STP62NS04Z |
| Datasheet |
 2NS04Z Datasheet
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| Part number | 2NS04Z |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 103.54 KB |
| Description | STP62NS04Z |
| Datasheet |
2NS04Z Datasheet
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This fully clamped MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout.
The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment .Any other application requiring extra ruggedness is also recommended.
TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ABS,SOLENOID DRIVERS s POWER TOOLS s ORDERING INFORMATION SALES TYPE STP62NS04Z MARKING P62NS04Z PACKAGE TO-220 PACKAGING TUBE November 2003 1/6 www.DataSheet.in STP62NS04Z ABSOLUTE MAXIMUM RATINGS Symbol VDS VDG VGS ID (*) ID (*) IDG IGS IDM ( ) PTOT dv/dt (1) EAS (2) VESD Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Gate Current (continuous) Gate Source Current (continuous) Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy ESD(HBM-C=100 pF, R=1.5 KΩ) Storage Temperature Operating Junction Temperature Value CLAMPED CLAMPED CLAMPED 40 40 ± 50 ± 50 160 110 0.74 5 500 8 – 55 to 175 Unit V V V A A mA mA A W W/°C V/ns mJ kV °C (•)Pulse width limited by safe operating area (*) Current Limited by Package (1) ISD ≤40A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX.
STP62NS04Z N-CHANNEL CLAMPED 12mΩ - 40A TO-220 FULLY PROTECTED MESH OVERLAY™ MOSFET ADVANCED DATA TYPE STP62NS04Z s s s s VDSS CLAMPED RDS(on) < 0.014 Ω ID 40 A (*) TYPICAL RDS(on) = 0.
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