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2ST15300
Datasheet
Rad-Hard 300 V, 5 A NPN bipolar transistor
2 1
3
SMD.5
C (3)
(1) B
E (2)
DS10450
Features
VCBO
IC(max.)
300 V
5A
• 100 krad • Linear gain characteristics • Inductive load ruggedness
HFE at 0.6 V, 250 mA > 55
Tj(max.) 200 °C
Description
The 2ST15300 is a power bipolar transistor able to operate under severe environment conditions and radiation exposure. It offers high reliability performance and immunity to the total ionizing dose (TID) up to 100 krad.
Qualified as per 5201/020 ESCC specification and available in SMD.5 hermetic package, it is specifically recommended for space and harsh environment applications and suitable for satellite electrical propulsion, inductive load switches and linear amplifiers.