STMicroelectronics 2ST15300
The 2ST15300 is a power bipolar transistor able to operate under severe environment conditions and radiation exposure. It offers high reliability performance and immunity to the total ionizing dose (TID) up to 100 krad.| Part No. | 2ST15300 |
|---|---|
| Datasheet | 2ST15300 Download |
| Manufacturer |  STMicroelectronics |
| Description | Rad-Hard 300V 5A NPN bipolar transistor |
| Buy | Stock & Price |
FEATURES
VCBO IC(max.) 300 V 5A● 100 krad
● Linear gain characteristics
● Inductive load ruggedness HFE at 0.6 V, 250 mA > 55 Tj(max.) 200 °C
DESCRIPTION
Qualified as per 5201/020 ESCC specification and available in SMD.5 hermetic package, it is specifically recommended for space and harsh environment applications and suitable for satellite electrical propulsion, inductive load switches and linear amplifiers. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Product status link 2ST15300 DS13014 - Rev 8 - May 2023 For further information contact your local STMicroelectronics sales office. 2ST15300 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings (pre-irradiation) Symbol VCBO VCEO VEBO IC PTOT Top Tj Parameter Collector-base cut-off current (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base current (IC = 0) Drain current (pulsed) Total power dissipation at Tcase ≤ 25 °C Total power dissipati...
