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2ST15300 - Rad-Hard NPN bipolar transistors

General Description

The 2ST15300 is a power bipolar transistor able to operate under severe environment conditions and radiation exposure.

It offers high reliability performance and immunity to the total ionizing dose (TID) up to 100 krad.

Key Features

  • VCBO IC(max. ) 300 V 5A.
  • 100 krad.
  • Linear gain characteristics.
  • Inductive load ruggedness HFE at 0.6 V, 250 mA > 55 Tj(max. ) 200 °C.

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2ST15300 Datasheet Rad-Hard 300 V, 5 A NPN bipolar transistor 2 1 3 SMD.5 C (3) (1) B E (2) DS10450 Features VCBO IC(max.) 300 V 5A • 100 krad • Linear gain characteristics • Inductive load ruggedness HFE at 0.6 V, 250 mA > 55 Tj(max.) 200 °C Description The 2ST15300 is a power bipolar transistor able to operate under severe environment conditions and radiation exposure. It offers high reliability performance and immunity to the total ionizing dose (TID) up to 100 krad. Qualified as per 5201/020 ESCC specification and available in SMD.5 hermetic package, it is specifically recommended for space and harsh environment applications and suitable for satellite electrical propulsion, inductive load switches and linear amplifiers.