STMicroelectronics 2ST31A
The device is manufactured in planar technology with “base island” layout. The resulting transistor shows high gain performance coupled with low saturation voltage.| Part No. | 2ST31A |
|---|---|
| Datasheet | 2ST31A Download |
| Manufacturer |  STMicroelectronics |
| Description | Low voltage NPN power transistor |
| Buy | Stock & Price |
FEATURES
● High switching speed● Good performances in terms of hFE linearity Application
● Linear and switching industrial applications
DESCRIPTION
TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code 2ST31A Marking 2ST31A Package TO-220 December 2010 Doc ID 17868 Rev 2 Packaging Tube 1/8 8 Absolute maximum ratings 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter VCBO VCEO VEBO IC ICM IB PTOT TSTG TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current Base current Total dissipation at Tcase = 25°C Storage temperature Max. operating junction temperature Table 3. Thermal data Symbol Parameter RthJC Thermal resistance junction-case max. 2ST31A Value 60 60 5 3 5 1 40 -65 to 150 150 Unit V V V A A A W °C °C Value 3.1 Unit °C/W 2/8 Doc ID 17868 Rev 2 2ST31A 2 Electrical characteristics Electrical characteristics Tcase = 25 °C unless otherwise specified.
