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2ST31A - Low voltage NPN power transistor

General Description

The device is manufactured in planar technology with “base island” layout.

The resulting transistor shows high gain performance coupled with low saturation voltage.

Figure 1.

Key Features

  • High switching speed.
  • Good performances in terms of hFE linearity.

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2ST31A Low voltage NPN power transistor Features ■ High switching speed ■ Good performances in terms of hFE linearity Application ■ Linear and switching industrial applications Description The device is manufactured in planar technology with “base island” layout. The resulting transistor shows high gain performance coupled with low saturation voltage. TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code 2ST31A Marking 2ST31A Package TO-220 December 2010 Doc ID 17868 Rev 2 Packaging Tube 1/8 www.st.com 8 Absolute maximum ratings 1 Absolute maximum ratings Table 2.