Part 2STC2510
Description High power NPN epitaxial planar bipolar transistor
Category Transistor
Manufacturer STMicroelectronics
Size 128.04 KB
STMicroelectronics
2STC2510

Overview

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

  • High breakdown voltage VCEO = 100 V Complementary to 2STA2510 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1