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2STL1360 - LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description

The devices are NPN transistors manufactured using new “PB-HCD” (power bipolar high current density) technology.

The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

Figure 1.

Features

  • Very low collector-emitter saturation voltage.
  • High current gain characteristic.
  • Fast-switching speed.

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Full PDF Text Transcription

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2STL1360 2STX1360 Low voltage fast-switching NPN power transistors Features ■ Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed Applications ■ Emergency lighting ■ LED ■ Voltage regulation ■ Relay drive Description The devices are NPN transistors manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. TO-92 TO-92L Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking 2STL1360 L1360 2STX1360 X1360 October 2009 Packages TO-92L TO-92 Doc ID 11763 Rev 3 Packaging Bag Bag 1/10 www.st.com 10 Electrical ratings 1 Electrical ratings 2STL1360, 2STX1360 Table 2.
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