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2STN2540 - Low voltage fast-switching PNP power bipolar transistor

Description

The device in a PNP transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology.

The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

Emergen

Features

  • Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface mounting device in medium power SOT-223 package In compliance with the 2002/93/EC European Directive 2 2 3.
  • 1 SOT-223.

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www.DataSheet4U.com 2STN2540 Low voltage fast-switching PNP power bipolar transistor Preliminary Data General features ■ ■ ■ ■ Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface mounting device in medium power SOT-223 package In compliance with the 2002/93/EC European Directive 2 2 3 ■ 1 SOT-223 Description The device in a PNP transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
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