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2STR1215 - Low voltage fast-switching NPN power transistor

Description

The 2STR1215 is a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology.

The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

Table 1.

Features

  • Very low collector-emitter saturation voltage.
  • High current gain characteristic.
  • Fast switching speed.
  • Miniature SOT-23 plastic package for surface mounting circuits.

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2STR1215 Low voltage fast-switching NPN power transistor 3 2 1 SOT-23 Figure 1. Internal schematic diagram Datasheet - production data Features • Very low collector-emitter saturation voltage • High current gain characteristic • Fast switching speed • Miniature SOT-23 plastic package for surface mounting circuits Applications • LED • Battery charger • Voltage and relay drive • Voltage regulation Description The 2STR1215 is a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Order code 2STR1215 Marking 1215 Table 1. device summary Package SOT-23 Packaging Tape and reel May 2016 This is information on a product in full production.
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