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2STR1230 - Low voltage fast-switching NPN power transistor

Description

The device is a NPN transistor manufactured using new “PB-HCD” (power bipolar high current density) technology.

The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

The complementary PNP is the 2STR2230.

Features

  • Very low collector-emitter saturation voltage.
  • High current gain characteristic.
  • Fast switching speed.
  • Miniature SOT-23 plastic package for surface mounting circuits.

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Full PDF Text Transcription

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2STR1230 Low voltage fast-switching NPN power transistor Features ■ Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits Applications ■ LED ■ Motherboard & hard disk drive ■ Mobile equipment ■ DC-DC converter ■ Voltage regulation Description The device is a NPN transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. The complementary PNP is the 2STR2230. 3 2 1 SOT-23 Figure 1. Internal schematic diagram Table 1.
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