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2STW1693 - High power PNP epitaxial planar bipolar transistor

General Description

The device is a PNP transistor manufactured in low voltage planar technology using base island layout.

The resulting transistor shows good gain linearity coupled with low VCE(sat) behaviour.

Recommended for 40W to 70W high fidelity audio frequency amplifier output stage.

Key Features

  • High breakdown voltage VCEO = -80 V.
  • Complementary to 2STW4466.
  • Typical ft = 20 MHz.
  • Fully characterized at 125 oC.

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2STW1693 High power PNP epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = -80 V ■ Complementary to 2STW4466 ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Applications ■ Audio power amplifier Description The device is a PNP transistor manufactured in low voltage planar technology using base island layout. The resulting transistor shows good gain linearity coupled with low VCE(sat) behaviour. Recommended for 40W to 70W high fidelity audio frequency amplifier output stage. 3 2 1 TO-247 Figure 1. Internal schematic diagram Table 1. Device summary Order code 2STW1693 Marking 2STW1693 Package TO-247 Packaging Tube October 2008 Rev 2 1/9 www.st.com 9 Electrical ratings 1 Electrical ratings Table 2.