2STW4468 - High Power NPN Epitaxial Planar Bipolar Transistor

ST Microelectronics

Datasheet Details

Part number	2STW4468
Manufacturer	STMicroelectronics ↗
File Size	213.91 KB
Description	High Power NPN Epitaxial Planar Bipolar Transistor
Datasheet	2STW4468_STMicroelectronics.pdf

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology.

High breakdown voltage VCEO=140V Complementary to 2STW1695 Fast-switching speed Typical ft =20MHz Fully characterized at 125 oC In compliance with the 2002/93/EC European Directive TO-247 3 2 1.

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Published: Mar 27, 2007 |