32N65DM6 Datasheet - STMicroelectronics

N-channel Power MOSFET

32N65DM6 Features

* Order code VDS RDS(on) max. ID TAB STHU32N65DM6AG 650 V 97 mΩ 37 A 7 1 HU3PAK Drain(TAB)

* AEC-Q101 qualified

* Fast-recovery body diode

* Lower RDS(on) x area vs previous generation

* Low gate charge, input capacitance and resistance

* 100% avalan

32N65DM6 General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching beh.

32N65DM6 Datasheet (654.23 KB)