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36DN6F7 Datasheet Dual N-channel Power MOSFET

Manufacturer: STMicroelectronics

General Description

This dual N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Order code STL36DN6F7 Marking 36DN6F7 Table 1: Device summary Package PowerFLAT™ 5x6 double island Packing Tape and reel May 2017 DocID028259 Rev 3 This is information on a product in full production.

1/15 www.st.com Contents Contents STL36DN6F7 1 Electrical ratings .......

Overview

STL36DN6F7 Dual N-channel 60 V, 23 mΩ typ., 33 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 double island package Datasheet - production data Figure 1: Internal schematic.

Key Features

  • Order code STL36DN6F7 VDS 60 V RDS(on) max 27 mΩ ID 33 A.
  • Among the lowest RDS(on) on the market.
  • Excellent figure of merit (FoM).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.