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3NM60N - N-channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • Order code STL3NM60N RDS(on) max. 1.8 Ω ID 2.2 A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL3NM60N N-channel 600 V, 1.5 Ω, 2.2 A MDmesh™ II Power MOSFET in a PowerFLAT™ 3.3 x 3.3 HV package Datasheet - production data 1 2 3 4 8 7 6 5 5 6 7 8 PowerFLAT™ 3.3x3.3 HV Features Order code STL3NM60N RDS(on) max. 1.8 Ω ID 2.2 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Application • Switching applications Figure 1. Internal schematic diagram 4G 3 2 1S 5 6 D 7 8 Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
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