3NM60N Datasheet | STMicroelectronics

STL3NM60N N-channel 600 V, 1.5 Ω, 2.2 A MDmesh™ II Power MOSFET in a PowerFLAT™ 3.3 x 3.3 HV package - production data 1 2 3 8 7 6 5 6 7 PowerFLAT™ 3.3x3.3 HV Features Order code STL3NM60N RDS(on) max. 1.8 Ω ID 2.2 A - 100% avalanche tested - Low input capacitance and gate charge - Low gate input resistance Application - Switching applications Figure 1. Internal schematic diagram 4G 3 2 1S 6 D Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and...