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3P6F6 - P-CHANNEL MOSFET

General Description

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Order code STN3P6F6 VDS -60 V RDS(on) max. 0.16 Ω ID -3 A.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.

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3P6MH THYRISTORS NEC

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Full PDF Text Transcription (Reference)

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STN3P6F6 P-channel -60 V, 0.13 Ω typ., -3 A STripFET™ F6 Power MOSFET in a SOT-223 package Datasheet - production data Figure 1: Internal schematic diagram D(2, 4) G(1) Features Order code STN3P6F6 VDS -60 V RDS(on) max. 0.16 Ω ID -3 A  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.