Order code STN3P6F6 VDS -60 V RDS(on) max. 0.16 Ω ID -3 A
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low gate drive.

* Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 techno.

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(3) Int_schem_P_ch_nTnZ_SOT_223 Order code STN3P6F6 Tabl.

3P6MH

3P2183A

3P2183AF

3P2183AG

3P4J

3P4M

3P4MH

3P70F4XZZ

3P9228

3PA1030

3PA9280

3PD5651E

3PD9708