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STMicroelectronics Electronic Components Datasheet

54HC21 Datasheet

DUAL 4-INPUT AND GATE

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. HIGH SPEED
tPD = 10 ns (TYP.) AT VCC = 5 V
. LOW POWER DISSIPATION
ICC = 1 µA (MAX.) AT TA = 25 °C
. HIGH NOISE IMMUNITY
VNIH = VNIL = 28% VCC (MIN.)
. OUTPUT DRIVE CAPABILITY
10 LSTTL LOADS
. SYMMETRICAL OUTPUT IMPEDANCE
IOH= IOL = 4 mA (MIN.)
. BALANCED PROPAGATION DELAYS
tPLH = tPHL
. WIDE OPERATING VOLTAGE RANGE
VCC (OPR) = 2 V TO 6 V
. PIN AND FUNCTION COMPATIBLE
WITH 54/74LS21
DESCRIPTION
The M54/74HC21 is a high speed CMOS DUAL 4-
INPUT AND GATE fabricated in silicon gate C2MOS
technology. It has the same high speed perform-
ance of LSTTL combined with true CMOSlow power
consumption.
The internal circuits is composed of 3 stages includ-
ing buffered output, which gives high noise immunity
and a stable output.
All inputs are equipped with protection circuits
against static discharge and transient excess volt-
age.
INPUT AND OUTPUT EQUIVALENT CIRCUIT
M54HC21
M74HC21
DUAL 4-INPUT AND GATE
B1R
(Plastic Package)
F1R
(Ceramic Package)
M 1R
(Micro Package)
C1R
(Chip Carrier)
ORDER CODES :
M54HC21F1R
M 74H C2 1M 1R
M 74HC 21 B1 R
M 74H C2 1C 1R
PIN CONNECTIONS (top view)
December 1992
NC =
No Internal
Connection
1/9


STMicroelectronics Electronic Components Datasheet

54HC21 Datasheet

DUAL 4-INPUT AND GATE

No Preview Available !

M54/M74HC21
TRUTH TABLE
ABCDY
LXXX L
X LXX L
XX LX L
XXXL L
HHHHH
PIN DESCRIPTION
PIN No
1, 9
2, 10
3, 11
4, 12
5, 13
6, 8
7
14
SYMBOL
1A to 2A
1B to 2B
NC
1C to 2C
1D to 2D
1Y to 2Y
GND
VCC
NAME AND FUNCTION
Data Inputs
Data Inputs
Not Connected
Data Inputs
Data Inputs
Data Outputs
Ground (0V)
Positive Supply Voltage
SCHEMATIC CIRCUIT (Per Gate)
IEC LOGIC SYMBOL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC Supply Voltage
-0.5 to +7
V
VI DC Input Voltage
-0.5 to VCC + 0.5
V
VO DC Output Voltage
-0.5 to VCC + 0.5
V
IIK DC Input Diode Current
± 20 mA
IOK DC Output Diode Current
± 20 mA
IO DC Output Source Sink Current Per Output Pin
± 25 mA
ICC or IGND DC VCC or Ground Current
± 50 mA
PD Power Dissipation
500 (*)
mW
Tstg Storage Temperature
-65 to +150
oC
TL Lead Temperature (10 sec)
300 oC
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnotimplied.
(*) 500 mW: 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC
2/9


Part Number 54HC21
Description DUAL 4-INPUT AND GATE
Maker STMicroelectronics
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54HC21 Datasheet PDF






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