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STMicroelectronics Electronic Components Datasheet

5NB90 Datasheet

STP5NB90

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STP5NB90
STP5NB90FP
N - CHANNEL 900V - 2.3 - 5A - TO-220/TO-220FP
PowerMESHMOSFET
TYPE
VDSS
RDS(on)
ID
ST P5N B90
ST P5N B90 FP
900 V
900 V
< 2.5
< 2.5
5A
5A
s TYPICAL RDS(on) = 2.3
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
www.DataSsheGet4AUT.cEomCHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
PRELIMINARY DATA
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY(UPS)
s DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
VDS Drain-source Voltage (VGS = 0)
V DGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM () Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO I nsulat ion W ithstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
September 1998
Value
STP5NB90 STP5NB90FP
900
900
± 30
5 5(*)
3.1 3.1(*)
20 20
125 40
1.0 0.32
4.5 4.5
2000
-65 to 150
150
( 1) ISD 5 Α, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
Un it
V
V
V
A
A
A
W
W /o C
V/ns
V
oC
oC
1/6


STMicroelectronics Electronic Components Datasheet

5NB90 Datasheet

STP5NB90

No Preview Available !

STP5NB90/FP
THERMAL DATA
Rthj-case
R th j -a mb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
1
TO220-FP
3.13
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
Max Value
5
Unit
A
EAS Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
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ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
318
mJ
Symbo l
V (BR)D SS
IDSS
IGSS
Pa ram et e r
Test Conditions
Dr ain- s ou rc e
Breakdown Voltage
ID = 250 µ A VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
900
Typ. Max.
1
50
± 100
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
Pa ram et e r
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 2.5 A
Resistance
On Stat e Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
3
T yp.
4
Max.
5
Unit
V
2.3 2.5
5A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
Pa ram et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Cap a ci t an c e
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID = 2.5 A
Min.
2.5
T yp.
4.1
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
1250
128
13
1625
170
20
pF
pF
pF
2/6


Part Number 5NB90
Description STP5NB90
Maker ST Microelectronics
PDF Download

5NB90 Datasheet PDF






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