n-channel power mosfet.
3 2 1
TO-247
Order code VDSS (@Tjmax) RDS(on) max ID
STW60NM50N
550 V
<0.043 Ω 68 A
* 100% avalanche tested
* Low input capacitance and gate charge
* Lo.
* Switching applications
Figure 1. Internal schematic diagram
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Description
This device is an N-channel Po.
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and g.
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