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65N55F3 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using STripFET™ F3 technology.

It is designed to minimize on-resistance and gate charge to provide superior switching performance.

Key Features

  • Type STD65N55F3 VDS 55 V RDS(on) max. 8.5 mΩ ID 80 A PTOT 110 W.
  • AEC-Q101 qualified.
  • 100% avalanche tested.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD65N55F3 Datasheet Automotive-grade N-channel 55 V, 6.5 mΩ typ., 80 A STripFET F3 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) AM01475v1_noZen Features Type STD65N55F3 VDS 55 V RDS(on) max. 8.5 mΩ ID 80 A PTOT 110 W • AEC-Q101 qualified • 100% avalanche tested Applications • Switching applications Description This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. Product status STD65N55F3 Product summary Order code STD65N55F3 Marking 65N55F3 Package DPAK Packing Tape and reel DS5128 - Rev 5 - January 2019 For further information contact your local STMicroelectronics sales office. www.st.