67N60DM6 Datasheet | STMicroelectronics

Features Order code RDS(on) max. STO67N60DM6 600 V 59 mΩ 58 A - Fast-recovery body diode - Lower RDS(on) per area vs previous generation - Low gate charge, input capacitance and resistance - 100% avalanche tested - Extremely high dv/dt ruggedness - Zener-protected Applications - Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. pared with the previous MDmesh fast generation, DM6 bines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STO67N60DM6 Device summary Order code STO67N60DM6 Marking Package TO-LL type A2 Packing Tape and reel DS13219 - Rev 5 - June 2021 For further information contact your local STMicroelectronics sales office. .st. STO67N60DM6 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter...