6F20V - N-channel MOSFET

Description

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge.

Features

Order code VDS RDS(on) max. ID 4 1 STS6NF20V 40 mΩ (@4.5 V) 20 V 6A 45 mΩ (@2.7 V) SO-8 1 S 2 S 8 D 7 D.
Ultra low threshold gate drive.
100% avalanche tested.
Low gate charge.

STMicroelectronics

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Datasheet Details

Part number	6F20V
Manufacturer	STMicroelectronics
File Size	342.95 KB
Description	N-channel MOSFET
Datasheet	6F20V Datasheet
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STS6NF20V Datasheet N-channel 20 V, 30 mΩ typ., 6 A, 2.7 V drive, STripFET II Power MOSFET in an SO-8 package 5 8 Features Order code VDS RDS(on) max. ID 4 1 STS6NF20V 40 mΩ (@4.5 V) 20 V 6A 45 mΩ (@2.7 V) SO-8 1 S 2 S 8 D 7 D • Ultra low threshold gate drive • 100% avalanche tested • Low gate charge Applications • Switching applications S 3 G 4 6 D D 5 Description This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.

Published: Jan 10, 2019 |