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STMicroelectronics Electronic Components Datasheet

6F20V Datasheet

N-channel MOSFET

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STS6NF20V
Datasheet
N-channel 20 V, 30 mΩ typ., 6 A, 2.7 V drive, STripFET II
Power MOSFET in an SO-8 package
5
8
Features
Order code
VDS
RDS(on) max.
ID
4
1
STS6NF20V
40 mΩ (@4.5 V)
20 V
6A
45 mΩ (@2.7 V)
SO-8
1
S
2
S
8
D
7
D
• Ultra low threshold gate drive
• 100% avalanche tested
• Low gate charge
Applications
• Switching applications
S
3
G
4
6
D
D
5
Description
This Power MOSFET has been developed using STMicroelectronics' unique
STripFET process, which is specifically designed to minimize input capacitance and
gate charge. This renders the device suitable for use as primary switch in advanced
high-efficiency isolated DC-DC converters for telecom and computer applications,
and applications with low gate charge driving requirements.
SC12830N
Product status link
STS6NF20V
Product summary
Order code
STS6NF20V
Marking
6F20V-
Package
SO-8
Packing
Tape and reel
DS2184 - Rev 5 - November 2020
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

6F20V Datasheet

N-channel MOSFET

No Preview Available !

1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
Drain current (continuous) at Tamb = 25 °C
ID
Drain current (continuous) at Tamb = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at Tamb = 25 °C
Tstg
Storage temperature range
Tj
Operating junction temperature range
1. Pulse width limited by safe operating area.
Symbol
Rthj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-ambient
STS6NF20V
Electrical ratings
Value
Unit
20
V
±12
V
6
A
3.8
A
24
A
2.5
W
°C
-55 to 150
°C
Value
50
Unit
°C/W
DS2184 - Rev 5
page 2/15


Part Number 6F20V
Description N-channel MOSFET
Maker STMicroelectronics
PDF Download

6F20V Datasheet PDF






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STMicroelectronics





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