Datasheet Summary
STS6NF20V
N-channel 20 V, 30 mΩ typ., 6 A, 2.7 V drive, STripFET II Power MOSFET in an SO-8 package
5 8
Features
Order code
RDS(on) max.
4 1
STS6NF20V
40 mΩ (@4.5 V)
20 V
6A
45 mΩ (@2.7 V)
SO-8
- Ultra low threshold gate drive
- 100% avalanche tested
- Low gate charge
Applications
- Switching applications
Description
This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for tele and puter...