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70R1K3S - N-Channel MOSFET

General Description

This device is an high voltage N-channel Power MOSFET.

This product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics.

Key Features

  • Order code VDS RDS(on) max. ID STU70R1K3S 700 V 1.4 Ω 5A.
  • Reduced switching losses.
  • Lower RDS(on) per area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

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STU70R1K3S Datasheet N-channel 700 V, 1.3 Ω typ., 5 A Power MOSFET in an IPAK package TAB G(1) 3 2 1 IPAK D(2, TAB) S(3) AM15572v1_tab Features Order code VDS RDS(on) max. ID STU70R1K3S 700 V 1.4 Ω 5A • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an high voltage N-channel Power MOSFET. This product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics.