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74AUP1G04 Datasheet Low power single inverter gate

Manufacturer: STMicroelectronics

General Description

The 74AUP1G04 is a low voltage CMOS single inverter gate fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.

It is ideal for 1.2 to 3.6 V operations and low power and low noise applications.

All inputs and outputs are equipped with protection circuits against static discharge, giving them 2kV ESD immunity and transient excess voltage.

Overview

www.DataSheet4U.com 74AUP1G04 Low power single inverter gate.

Key Features

  • High speed: tPD = 4.3 ns (max. ) at VCC = 2.3 V Power down protection on inputs and outputs Balanced propagation delays: tPLH ≈ tPHL Operating voltage range: VCC (opr) = 1.2 to 3.6 V Low power dissipation: ICC = 1 µA (max. ) at TA = 85 °C Latch-up performance exceeds 300 mA (JESD 78, Class II) ESD performance:.
  • 2000-V Human-Body Model (A114-A).
  • 200-V Machine Model (A115-A).
  • 1000-V Charged-Device Model (C101) SOT-665 DFN6L Appli.