7ANM60N Datasheet | STMicroelectronics

STB7ANM60N, STD7ANM60N Automotive-grade N-channel 600 V, 0.8 Ω typ., 5 A MDmesh™ II Power MOSFETs in D²PAK and DPAK packages 3 1 D2PAK 23 1 DPAK D(2, TAB) Features Order code STB7ANM60N STD7ANM60N RDS(on) max. 600 V 0.9 Ω 5A - AEC-Q101 qualified - 100% avalanche tested - Low input capacitance and gate charge - Low gate input resistance Package D²PAK DPAK G(1) S(3) Applications - Switching applications AM01475v1_no Zen Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. Product status link STB7ANM60N STD7ANM60N Product summary Order code STB7ANM60N Marking Package D²PAK...