| Description | These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. Product status link STB7ANM60N STD7ANM60N Product summa... |
| Features |
Order code STB7ANM60N STD7ANM60N
VDS
RDS(on) max.
ID
600 V
0.9 Ω
5A
• AEC-Q101 qualified • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Package D²PAK DPAK G(1) S(3) Applications • Switching applications AM01475v1_noZen Description These devices are N-channel Power MOSFETs developed using the ... |
| Datasheet |
 7ANM60N Datasheet - 740.84KB |
