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ADP61075W3 - SiC MOSFET

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carbide Power MOSFET 2nd generation, are characterized by very low RDS(on), very limited switching losses and outstanding performances in synchronous rectification rweocrhkainrTvggehinmhegoiccdAyleeCc.lseTEshtP.risaAcwCtililKoennDsinuRrveIVesrEutepiers.rbTaehcffiioscimepnopcway cientrfsimniaxolpadapucplkleicmafetiooandt,uusrlaeevsiongspwtbimaittctiezhreyeds for hybrid based on and electric silicon tAhicsoppopcweaerrrbbmaidsoeedpuPllaeotemwwineiitrmhMipziinnOg-fSitnhFebEramsTeal3srtrerduscigs

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