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AM1214-100 - L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

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Description

The AM1214-100 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications.

This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 3:1 output VSWR at rated RF conditions.

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Datasheet Details

Part number AM1214-100
Manufacturer STMicroelectronics
File Size 35.09 KB
Description L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
Datasheet download datasheet AM1214-100 Datasheet
Additional preview pages of the AM1214-100 datasheet.

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AM1214-100 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . . . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 100 W MIN. WITH 6.0 dB GAIN .400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM1214-100 BRANDING 1214-100 DESCRIPTION The AM1214-100 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 3:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
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