Datasheet Details
| Part number | AM1214-175 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 93.23 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet |
 AM1214-175 Datasheet
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| Part number | AM1214-175 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 93.23 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet |
AM1214-175 Datasheet
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The AM1214-175 device is a high power Class C transistor specifically designed for L-Band radar pulsed output and driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 3:1 output VSWR at rated RF conditions.
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
AM1214-175 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS ........
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 160 W MIN.
WITH 7.3 dB GAIN .400 x .
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