AM80610-030 datasheet, transistors equivalent, STMicroelectronics

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AM80610-030 Application

. . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING METAL/CERAMIC HERMETIC PACKAGE PO.

AM80610-030 Description

The AM80610-030 is a high power, common base NPN silicon bipolar device optimized for CW operation in the 620 - 960 MHz frequency range. AM80610-030 utilizes a rugged, overlay, emitterballasted L-Band die geometry to achieve high gain and collector e.

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