AM82223-010 transistors equivalent, rf & microwave transistors.
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REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY AT RATED CONDITIONS LOW THER.
The AM82223-010 is a common base, silicon NPN bipolar transistor designed for high gain and efficiency in the 2.2 − 2.3 GHz frequency range. Suitable for hi-rel aerospace telemetry applications, the AM82223-010 is provided in the industry-standard AM.
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