AM82731-006 transistors equivalent, rf & microwave transistors.
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE M.
The AM82731-006 device is a medium power silicon bipolar NPN transistor specifically designed for SBand radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and can wit.
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