AM82731-006 Datasheet | STMicroelectronics

DESCRIPTION The AM82731-006 device is a medium power silicon bipolar NPN transistor specifically designed for SBand radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 5:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and automatic wire bonding techniques ensure high reliability and product consistency. The AM82731-006 is supplied in the hermetic metal/ceramic package with internal input/output impedance matching circuitry, and is intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25°C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS Ic VCC TJ T STG Power Dissipation- Device Current- (TC ≤100°C) 40 1.8 34 250 - 65 to +200 W A V °C °C Collector-Supply Voltage- Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 3.75 °C/W - Applies only to rated RF amplifier operation August 1992 1/4 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Value Symbol Test Conditions Min. Typ. Max. Unit BV CBO BV EBO BV CER ICES h FE ICC = 5m A IE = 0m A IC = 0m A RBE = 10Ω IC = 500m A 50 3.5 50 - 10 - - - - - - - - 4 - V V V m A - IE = 1m A IC = 5m A VCE = 30V VCE = 5V DYNAMIC Symbol Test Conditions Min. Value Typ. Max. Unit POUT ηC GPB Note: f = 2.7 - 3.1GHz f = 2.7 - 3.1GHz f = 2.7 - 3.1GHz = = 100 µ S 10% PIN = 1.5W PIN = 1.5W PIN = 1.5W VCC = 30V VCC = 30V VCC = 30V 5.5 27...