Datasheet Details
| Part number | AM82731-006 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 67.94 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet | AM82731-006_STMicroelectronics.pdf |
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Overview: AM82731-006 . . . . . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 5.5 W. MIN. WITH 5.6 dB GAIN BANDWIDTH = 400 MHz .400 x .
| Part number | AM82731-006 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 67.94 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet | AM82731-006_STMicroelectronics.pdf |
|
|
|
The AM82731-006 device is a medium power silicon bipolar NPN transistor specifically designed for SBand radar pulsed driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 5:1 output VSWR.
Low RF thermal resistance, refractory/gold metallization, and automatic wire bonding techniques ensure high reliability and product consistency.
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