Datasheet4U Logo Datasheet4U.com

AM82731-006 - RF & MICROWAVE TRANSISTORS

General Description

The AM82731-006 device is a medium power silicon bipolar NPN transistor specifically designed for SBand radar pulsed driver applications.

This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 5:1 output VSWR.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
Am8279 Programmable Keyboard/Display Interface AMD
Am8279-5 Programmable Keyboard/Display Interface AMD
AM8205 N-CHANNEL ENHANCEMENT MODE POWER MOSFET AiT Semiconductor
AM8212 8-Bit Input/Output Port AMD
Am8216 4-Bit Parallel Bidirectional Bus Driver AMD

Other Datasheets by STMicroelectronics

Part Number Description
AM82731-003 RF & MICROWAVE TRANSISTORS
AM82731-012 RF & MICROWAVE TRANSISTORS
AM82731-025 RF & MICROWAVE TRANSISTORS
AM82731-050 RF & MICROWAVE TRANSISTORS
AM82223-010 RF & MICROWAVE TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AM82731-006 . . . . . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 5.5 W. MIN. WITH 5.6 dB GAIN BANDWIDTH = 400 MHz .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE AM 82731-006 BRANDING 82731-6 PIN CONNECTION DESCRIPTION The AM82731-006 device is a medium power silicon bipolar NPN transistor specifically designed for SBand radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 5:1 output VSWR.