B10NK60Z Datasheet - STMicroelectronics

N-CHANNEL Power MOSFET

B10NK60Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltag

B10NK60Z General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements .

B10NK60Z Datasheet (902.26 KB)

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B10NK60Z

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STMicroelectronics ↗

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902.26 KB

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N-channel power mosfet.
STP10NK60Z/FP, STB10NK60Z/-1 STH10NK60ZFI, STW10NK60Z N-CHANNEL600V-0.65 Ω-10ATO-220/FP/D 2PAK/I2PAK/TO-247/ISOWATT218 Zener-Protected SuperMESH™ Pow.

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B10NK60Z N-CHANNEL Power MOSFET STMicroelectronics

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B10NK60Z Features

B10NK60Z General Description

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