Order codes VDSS (@ TJmax) RDS(on) max. STB11NM60T4 STP11NM60 650 V 0.45 Ω
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate i.

* Switching applications Description These devices are N-channel Power MOSFETs developed using the second generatio.

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and.

B11NM60N

B11NM80

B11NK50Z

B110

B1100

B1100B

B1100BQ

B1100CALRP

B1100CCLRP

B1100LB

B1100Q

B1100W

B1100W-F