Type VDSS (@TJmax) STB11NM60N-1 STB11NM60N STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N 650 V 650 V 650 V 650 V 650 V 650 V RDS(on) max 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω .

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary P.

This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge..

B11NM60

B11NM80

B11NK50Z

B110

B1100

B1100B

B1100BQ

B1100CALRP

B1100CCLRP

B1100LB

B1100Q

B1100W

B1100W-F