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B20NM60 - N-CHANNEL POWER MOSFET

General Description

The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.

Key Features

  • Type STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 VDSS 600V 600V 600V 600V 600V RDS(on) < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω ID 20A 20A 20A 20A 20A.
  • High dv/dt and avalanche capabilities.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Full PDF Text Transcription for B20NM60 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for B20NM60. For precise diagrams, and layout, please refer to the original PDF.

STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh™ Power MOSFET Features Type STP20NM60 STP2...

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TO-220/FP - D2/I2PAK MDmesh™ Power MOSFET Features Type STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 VDSS 600V 600V 600V 600V 600V RDS(on) < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω ID 20A 20A 20A 20A 20A ■ High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt an

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