B25NM60N Datasheet | STMicroelectronics

STB25NM60Nx - STF25NM60N STP25NM60N - STW25NM60N N-channel 600 V, 0.130 Ω , 21 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 Features Type VDSS (@Tjmax) RDS(on) max STB25NM60N t(s)STB25NM60N-1 c STF25NM60N u STP25NM60N rod )STW25NM60N 650 V 650 V 650 V 650 V 650 V < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω 21 A 21 A 21 A(1) 21 A 21 A P t(s1. Limited only by maximum temperature allowed te c- 100% avalanche tested le du- Low input capacitance and gate charge so ro- Low gate input resistance - Ob te PApplication ) le- Switching applications ct(s bso Description du - OThis series of devices is realized with the second ro )generation of MDmesh™ technology. This P t(srevolutionary MOSFET associates a new vertical te cstructure to the pany’s strip layout to yield one le uof the world’s lowest on-resistance and gate dcharge. It is therefore suitable for the most so rodemanding high efficiency converters 3 2 1 TO-220FP 3...