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B85NF55 - N-CHANNEL POWER MOSFET

Description

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge.

Features

  • Type STB85NF55T4 STP85NF55 VDS 55 V.
  • AEC-Q101 qualified.
  • Exceptional dv/dt capability.
  • 100% avalanche tested.
  • Low gate charge RDS(on) max. 8.0 mΩ ID 80 A G(1) S(3).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB85NF55T4, STP85NF55 Datasheet Automotive-grade N-channel 55 V, 6.2 mΩ typ., 80 A, STripFET™ II Power MOSFETs in D²PAK and TO-220 packages TAB TAB 3 1 D2PAK TO-220 1 23 D(2, TAB) Features Type STB85NF55T4 STP85NF55 VDS 55 V • AEC-Q101 qualified • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge RDS(on) max. 8.0 mΩ ID 80 A G(1) S(3) Applications • Switching applications AM01475v1_noZen Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge.
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