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BAS69 Datasheet

Low capacitance small signal Schottky diodes

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BAS69
Low capacitance small signal Schottky diodes
Features
Low diode capacitance
BAS69KFILM
(Single)
Designed for RF applications
Low profile packages
t(s) Very low parasitic inductor and resistor
uc Description
rod ) The BAS69 series use 15V barrier, with extremely
P t(s low junction capacitance, suitable for the
detection of an RF signal and the compensation
lete uc of the voltage drift with the temperature. The
d presented packages make the device ideal in
so ro applications where space saving is critical.
b P The low junction capacitance will reduce the
- O te disturbance on the RF signal.
SOD-523
SOT-323
BAS69WFILM
(Single)
BAS69-05WFILM
(Common cathode)
BAS69-06WFILM
(Common anode)
BAS69-04WFILM
(Series)
ct(s) bsole BAS69-07P6FILM
u O (2 parallel diodes)
Prod t(s) - SOT-666
BAS69-09P6FILM
(2 opposite diodes)
lete duc Configurations in top view
bso Pro Table 1. Device summary
O te Symbol
ole IF
bs VRRM
O C (typ)
Value
10 mA
15 V
< 1 pF
Tj (max)
150 °C
October 2009
Doc ID 12565 Rev 2
1/9
www.st.com
9


STMicroelectronics Electronic Components Datasheet

BAS69 Datasheet

Low capacitance small signal Schottky diodes

No Preview Available !

Characteristics
1
Characteristics
BAS69
Table 2.
Symbol
Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)
Parameter
Value
Unit
VRRM
IF
IFSM
Repetitive peak reverse voltage
Continuous forward current
Surge non repetitive forward current
Half wave, single phase
60 Hz
15
V
10
mA
2
A
Tstg Storage temperature range
) Tj Maximum operating junction temperature (1)
t(s TL Maximum soldering temperature(1)
c 1. Pulse test: tp = 380 µs, δ < 2 %
du Table 3. Thermal parameters
-65 to +150
150
260
Pro t(s) Symbol
Parameter
Value
lete uc Rth(j-a) Junction to ambient(1)
SOT-323
550
SOD-523, SOT-666
600
so rod 1. Epoxy printed circuit board with recommended pad layout
b P Table 4. Static electrical characteristics
- O te Symbol
Parameter
Test conditions
Min. Typ Max.
t(s) ole Tj = 25 °C
sVR = 1 V
c b IR(1)
Tj = 125 °C
Reverse leakage current
u O Tj = 25 °C
d - VR = 15 V
ro )Tj = 125 °C
solete Product(s VF(1) Forward voltage drop
Tj = 25 °C
IF = 1 mA
Tj = 125 °C
Tj = 25 °C
IF = 10 mA
Tj = 125 °C
b P 1. Pulse test: tp 250 ms, δ ≤ 2 %
O leteTable 5. Dynamic characteristics
o Symbol
Parameter
Test conditions
Min.
0.035
6
30
0.23
10
100
350
380
230 260
500
570
460 510
Typ Max.
Obs C Diode capacitance
VR = 0 V, F = 1 MHz
1.0
°C
Unit
°C/W
Unit
µA
mV
Unit
pF
RF Forward resistance
IF = 5 mA, F = 100 MHz
15
Ω
LS Series inductance
1.5
nH
2/9
Doc ID 12565 Rev 2


Part Number BAS69
Description Low capacitance small signal Schottky diodes
Maker STMicroelectronics
PDF Download

BAS69 Datasheet PDF






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