BTA04-400 Datasheet | STMicroelectronics

FEATURES Very low IGT = 10m A max Low IH = 15m A max BTA Family: Insulating voltage = 2500V(RMS) (UL recognized: E81734) s s s G A1 DESCRIPTION The BTA/BTB04 T/D/S/A triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. A1 A2 TO-220AB ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM I2t d I/dt Parameter RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C) I2t value Critical rate of rise of on-state current Gate supply: IG = 50m A d IG/dt = 0.1A/µs Storage and operating junction temperature range Maximum lead soldering temperature during 10s at 4.5mm from case BTA BTB Tc = 90°C Tc = 95°C tp = 8.3ms tp = 10ms tp = 10ms Repetitive F = 50Hz Non repetitive Tstg Tj Tl 42 40 8 10 50 -40 to +150 -40 to +110 260 °C °C A2s A/µs A Value 4 Unit A BTA / BTB04Symbol VDRM VRRM Parameter 400 T/D/S/A 600 T/D/S/A 600 700 T/D/S/A 700 V Unit 400 Repetitive peak off-state voltage Tj = 110°C September 2001 - Ed: 1A 1/6 BTA04 T/D/S/A BTB04 T/D/S/A THERMAL RESISTANCE Symbol Rth (j-a) Rth (j-c) DC Rth (j-c) AC Junction to ambient Junction to case for DC Junction to case for 360° conduction angle (F = 50Hz) BTA BTB BTA BTB Parameter Value 60 4.4 3.2 3.3 2.4 °C/W Unit °C/W °C/W GATE CHARACTERISTICS (maximum values) PG(AV) = 1W PGM = 40W (tp = 20µs) IGM = 4A (tp = 20µs) VGM = 16V (tp = 20µs) ELECTRICAL CHARACTERISTICS BTA / BTB04 Symbol IGT Test conditions VD = 12V (DC) RL = 33Ω Tj = 25°C Quadrant T I - II - III IV VGT VGD tgt IL VD = 12V (DC) VD = VDRM RL = 33Ω RL = 3.3kΩ Tj = 25°C Tj =110°C Tj = 25°C Tj = 25°C I - II - III - IV I - II - III - IV I - II - III - IV I - III - IV II IH- VTM - IDRM IRRM d V/dt - IT = 100m A Gate open ITM = 5.5A VDRM rated VRRM rated Linear slope up to VD = 67% VDRM gate open (d I/dt)c = 1.8A/ms tp = 380µs Tj = 25°C Tj =...