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BTA10-800C - (BTA10-B/C) Standard Triacs

Download the BTA10-800C datasheet PDF. This datasheet also covers the BTA10-400B variant, as both devices belong to the same (bta10-b/c) standard triacs family and are provided as variant models within a single manufacturer datasheet.

Description

The BTA/BTB10 B/C triac family are high performance glass passivated PNPN devices.

These parts are suitables for general purpose applications where high surge current capability is required.

Application such as phase control and static switching on inductive or resistive load.

Features

  • HIGH SURGE.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BTA10-400B_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BTA10-800C Triac INCHANGE
BTA10-800CW Triac INCHANGE
BTA10-800CW logic level and standard Triacs STMicroelectronics
BTA10-800B Triac INCHANGE
BTA10-800BW logic level and standard Triacs STMicroelectronics

Other Datasheets by STMicroelectronics

Part Number Description
BTA10-400B (BTA10-B/C) Standard Triacs
BTA10-400C (BTA10-B/C) Standard Triacs
BTA10-400GP TRIACS
BTA10-700B (BTA10-B/C) Standard Triacs
BTA10-700C (BTA10-B/C) Standard Triacs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com BTA10 B/C BTB10 B/C STANDARD TRIACS . . . FEATURES HIGH SURGE CURRENT CAPABILITY COMMUTATION : (dV/dt)c > 5 V/µs BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB10 B/C triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where high surge current capability is required. Application such as phase control and static switching on inductive or resistive load. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) I2t value Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs Parameter BTA BTB Tc = 90 °C Tc = 95 °C tp = 8.
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