BTA12, BTB12, T1205, T1210, T1235, T1250
Characteristics
1 Characteristics
Table 1. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)
Symbol
Parameter
Value
Unit
IT(RMS) RMS on-state current (full sine wave)
TO-220AB, D²PAK Tc = 105 °C
TO-220AB Ins.
Tc = 90 °C
12
A
ITSM
Non repetitive surge peak on-state current (full cycle, Tj f = 50 Hz
initial = 25 °C)
f = 60 Hz
t = 20 ms
tp = 16.7 ms
120
126
A
I2t I2t value for fusing
tp = 10 ms
78 A2s
dl/dt
Critical rate of rise of on-state current IG = 2 x IGT, tr ≤
100 ns
f = 120 Hz
Tj = 125 °C
50 A/µs
VDSM/VRSM Non repetitive surge peak off-state voltage
tp = 10 ms
Tj = 25 °C
VDRM / VRRM +
100
V
IGM Peak gate current
tp = 20 µs
Tj = 125 °C
4
A
PG(AV) Average gate power dissipation
Tj = 125 °C 1 W
Tstg Storage junction temperature range
-40 to +150 °C
Tj Operating junction temperature range
-40 to +125 °C
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) - Snubberless™ and logic level
(3 quadrants)
Symbol
Parameter
Quadrant
T1205
BTB12-TW
BTA12-TW
T1210
BTB12-SW
BTA12-SW
T1235
T1250
BTB12-
CW
BTB12-
BW
BTA12-CW BTA12-BW
Unit
IGT (1)
VGT
VD = 12 V, RL = 30 Ω
I - II - III Max.
I - II - III Max.
5
10 35
1.3
50 mA
V
VGD VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C I - II - III Min.
0.2
V
IH (2) IT = 100 mA
I - II - III Max.
10
15
35
50 mA
IL (2) IG = 1.2 x IGT
I - III Max.
10
25
50
70
mA
II Max. 15 30 60 80
dV/dt (2) VD = 67% VDRM, gate open, Tj = 125 °C
Max.
20
40 500 1000 V/µs
(dV/dt)c = 0.1 V/µs, Tj = 125 °C
Min. 3.5
6.5
(dl/dt)c (2) (dV/dt)c = 10 V/µs, Tj = 125 °C
Min. 1.0
2.9
A/ms
Without snubber, Tj = 125 °C
Min.
6.5 12
1. Minimum IGT is guaranteed at 5 % of IGT max.
2. For both polarities of A2 referenced to A1
DS2115 - Rev 12
page 2/16
